Room-temperature phonon focusing in boron arsenide
We observed directional phonon transport at room temperature in boron arsenide. Instead of conventional diffuse spreading, heat forms concentrated patterns governed by crystal orientation.

Key findings
- Room-temperature phonon focusing demonstrated in cubic boron arsenide.
- Nanoscale temperature mapping reveals directional, crystallographically dependent transport patterns.
- Measurements are compared with first-principles phonon Boltzmann transport calculations.
Relevance to electronics and thermal management
The findings establish a route toward directional nanoscale heat control. They motivate future thermal and quantum technologies, and new approaches to semiconductor thermal management.
Publication and authors
Phonon focusing at room temperature
Man Li, Huan Wu, Zihao Qin, Chuanjin Su, Huu Duy Nguyen, Yongjie Hu
[Nature Physics 22, 1416 (2026) · Download PDF]
DOI: 10.1038/s41567-026-03335-y
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Cubic Boron Arsenide: From Materials Discovery to Device Applications, Semiconductor Integration, and Room-Temperature Quantum Phenomena
Our BAs research connects crystal synthesis and ultrahigh thermal conductivity with thermal interfaces, GaN device integration, high-pressure transport, and room-temperature phonon focusing.
